2SB1432 NEC PNP SILICON EPITAXIAL TRANSISTOR Datasheet. existencias, precio

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2SB1432

NEC
2SB1432
2SB1432 2SB1432
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Part Number 2SB1432
Manufacturer NEC
Description of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these cir...
Features
• High hFE due to Darlington connection hFE ≥ 1,000 @VCE = −2.0 V, IC = −10 A)
• Mold package that does not require an insulation board or insulation bushing ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse) IB(DC) PT Tj Tstg Conditions PW ≤ 300 µs, duty cycle ≤ 10% TC = 25°C TA = 25°C Ratings −100 −100 −8.0 +
  –10 +
  –20 Unit V V V A A −1.0 30 2.0...

Document Datasheet 2SB1432 Data Sheet
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