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2SB649 |
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| Part Number | 2SB649 |
| Manufacturer | JCST |
| Description | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR (PNP) TO- 126 FEATURES Low Frequency Power Amplifier Complementary Pair with 2SD6... |
| Features |
Low Frequency Power Amplifier Complementary Pair
with 2SD669/A
1. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
2. COLLECTOR
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-180
V
3. BASE
VCEO
Collector-Emitter Voltage
2SB649
-120
V
2SB649A
-160
VEBO
Emitter-Base Voltage
-5 V
IC
Collector Current –Continuous -1.5 A PC Collector Power Dissipation 1 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ BDTICELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collecto... |
| Document |
 2SB649 Data Sheet
PDF 364.88KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB642 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor |
|
| 2 | 2SB643 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor |
|
| 3 | 2SB644 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor |
|
| 4 | 2SB645 |
INCHANGE |
PNP Transistor |
|
| 5 | 2SB645 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 6 | 2SB646 |
Hitachi |
Silicon PNP Epitaxial Transistor |
|
Desde 2024. D4U Semiconductor.
|