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C3114 |
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| Part Number | C3114 |
| Manufacturer | Sanyo Semicon Device |
| Description | Ordering number:ENN1047C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1246/2SC3114 www.datasheet4u.com High-VEBO, AF Amp Applications Features · High VEBO. · Wide ASO and highly resistant to br... |
| Features |
· High VEBO. · Wide ASO and highly resistant to breakdown. Package Dimensions unit:mm 2003B [2SA1246/2SC3114] 5.0 4.0 4.0 0.45 0.5 0.45 0.44 0.6 2.0 14.0 5.0 ( ) : 2SA1246 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current ICBO VCB=( –)40V, IE... |
| Document |
 C3114 Data Sheet
PDF 71.46KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | C3112 |
Toshiba Semiconductor |
2SC3112 |
|
| 2 | C3113 |
Toshiba Semiconductor |
2SC3113 |
|
| 3 | C3116 |
Sanyo |
2SC3116 |
|
| 4 | C3117 |
Sanyo Semicon Device |
2SC3117 |
|
| 5 | C311C |
NEC |
UPC311C |
|
| 6 | C3101 |
Mitsubishi Electronics |
2SC3101 |
|
| 7 | C3102 |
Mitsubishi Electric Semiconductor |
2SC3102 |
|
| 8 | C3120 |
Toshiba Semiconductor |
2SC3120 |
|
| 9 | C3121 |
Toshiba |
2SC3121 |
|
| 10 | C3122 |
Toshiba |
2SC3122 |
|
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