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BC337-16 |
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| Part Number | BC337-16 |
| Manufacturer | Siemens |
| Description | NPN Silicon AF Transistors q High current gain q High collector current q Low collector-emitter saturation voltage q Complementary types: BC 327, BC 328 (PNP) BC 337 BC 338 2 3 1 Type BC 337 BC 337-... |
| Features |
mA
mW ˚C
Rth JA Rth JC
≤ 200 ≤ 135
K/W
1) Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
Semiconductor Group
2
BC 337 BC 338
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage
V(BR)CE0
V
IC = 10 mA
BC 337
45 – – BC 338 25 – – Collector-base breakdown voltage IC = 100 µA BC 337 BC 338 V(BR)CB0 50 30 – – – – Emitter-base breakdown voltage IE = 10 µA V(BR)EB0 5 – – Collector cutoff current VCB = 25 V VCB = 45 V VCB = 25 V, TA = 150 ˚C VCB = 45 V, TA... |
| Document |
 BC337-16 Data Sheet
PDF 148.74KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BC337-16 |
NXP |
NPN general purpose transistor |
|
| 2 | BC337-16 |
ON Semiconductor |
Amplifier Transistors |
|
| 3 | BC337-16 |
Fairchild Semiconductor |
NPN General Purpose Amplifier |
|
| 4 | BC337-16 |
Taiwan Semiconductor |
NPN Transistor |
|
| 5 | BC337-16 |
Fairchild Semiconductor |
NPN General Purpose Amplifier |
|
| 6 | BC337-16 |
MCC |
NPN Plastic-Encapsulate Transistors |
|
| 7 | BC337-25 |
Multicomp |
Bipolar Transistors |
|
| 8 | BC337-25 |
NXP |
NPN general purpose transistor |
|
| 9 | BC337-25 |
ON Semiconductor |
Amplifier Transistors |
|
| 10 | BC337-25 |
Fairchild Semiconductor |
NPN General Purpose Amplifier |
|
Desde 2024. D4U Semiconductor.
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