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RF1S50N06 |
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| Part Number | RF1S50N06 |
| Manufacturer | Harris |
| Description | Packages DRAIN (BOTTOM SIDE METAL) JEDEC STYLE TO-247 SOURCE DRAIN GATE The RFG50N06, RFP50N06, RF1S50N06, and RF1S50N06SM N-Channel power MOSFETs are manufactured using the MegaFET process. This p... |
| Features |
• 50A, 60V • rDS(ON) = 0.022Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • +175oC Operating Temperature Description Packages DRAIN (BOTTOM SIDE METAL) JEDEC STYLE TO-247 SOURCE DRAIN GATE The RFG50N06, RFP50N06, RF1S50N06, and RF1S50N06SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switc... |
| Document |
 RF1S50N06 Data Sheet
PDF 77.46KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | RF1S50N06LESM |
Intersil Corporation |
50A/ 60V/ 0.022 Ohm/ Logic Level N-Channel Power MOSFETs |
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| 2 | RF1S50N06SM |
Fairchild Semiconductor |
50A/ 60V/ 0.022 Ohm/ N-Channel Power MOSFETs |
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| 3 | RF1S50N06SM |
Intersil Corporation |
50A/ 60V/ 0.022 Ohm/ N-Channel Power MOSFETs |
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| 4 | RF1S50N06SM |
Harris |
Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs |
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| 5 | RF1S540 |
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| 6 | RF1S540SM |
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N-Channel Power MOSFETs |
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Desde 2024. D4U Semiconductor.
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