RF1S50N06SM Datasheet. existencias, precio

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RF1S50N06SM 50A/ 60V/ 0.022 Ohm/ N-Channel Power MOSFETs


RF1S50N06SM
Part Number RF1S50N06SM
Distributor Stock Price Buy
Harris
RF1S50N06SM
Part Number RF1S50N06SM
Manufacturer Harris
Title Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs
Description Packages DRAIN (BOTTOM SIDE METAL) JEDEC STYLE TO-247 SOURCE DRAIN GATE The RFG50N06, RFP50N06, RF1S50N06, and RF1S50N06SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilizat.
Features
• 50A, 60V
• rDS(ON) = 0.022Ω
• Temperature Compensating PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• +175oC Operating Temperature Description Packages DRAIN (BOTTOM SIDE METAL) JEDEC STYLE TO-247 SOURCE DRAIN GATE The RFG50N06, RFP50N06, RF1S50N06, and RF1S50N06SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes.
Fairchild Semiconductor
RF1S50N06SM
Part Number RF1S50N06SM
Manufacturer Fairchild Semiconductor
Title 50A/ 60V/ 0.022 Ohm/ N-Channel Power MOSFETs
Description RFG50N06, RFP50N06, RF1S50N06SM Data Sheet January 2002 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, re.
Features
• 50A, 60V
• rDS(ON) = 0.022Ω
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature Symbol D Ordering Information PART NUMBER RFG50N06 RFP50N06 RF1S50N06SM PACKAGE TO-247 TO-220AB TO-263AB BRAND RFG50N06 RFP50N06 F1S50N06 S G NOTE: When ordering, use the entire part number. Add the suffix, 9A, to obtain the TO-263AB variant .

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