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1N5712 |
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| Part Number | 1N5712 |
| Manufacturer | Avago |
| Description | Applications The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost glass pack... |
| Features |
• Low Turn-On Voltage As Low as 0.34 V at 1 mA • Pico Second Switching Speed • High Breakdown Voltage Up to 70 V • Matched Characteristics Available Outline 15 0.41 (.016)� 0.36 (.014) Maximum Ratings Junction Operating and Storage Temperature Range 1N5711, 1N5712, 5082-2800/10/11...... -65°C to +200°C 5082-2835..... -60°C to +150°C DC Power Dissipation (Measured in an infinite heat sink at TCASE = 25°C) Derate linearly to zero at maximum rated temp. 1N5711, 1N5712, 5082-2800/10/11.250 mW 5082-2835......... |
| Document |
 1N5712 Data Sheet
PDF 216.30KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 1N5711 |
STMicroelectronics |
SMALL SIGNAL SCHOTTKY DIODE |
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| 2 | 1N5711 |
Compensated Deuices Incorporated |
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| 3 | 1N5711 |
Diodes Incorporated |
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| 4 | 1N5711 |
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| 5 | 1N5711 |
Microsemi Corporation |
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| 6 | 1N5711 |
Avago |
Schottky Barrier Diodes |
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Desde 2024. D4U Semiconductor.
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