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TJ100F06M3L |
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| Part Number | TJ100F06M3L |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TJ100F06M3L MOSFETs Silicon P-Channel MOS (U-MOS) TJ100F06M3L 1. Applications • • • • Automotive Relay Drivers DC-DC Converters Motor Drivers 2. Features (1) (2) (3) Low drain-source on-resistance:... |
| Features |
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 5.6 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA)
3. Packaging and Internal Circuit
1: Gate 2: Drain (Heatsink) 3: Source
TO-220SM(W)
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (Note 3) (Note 3) (Tc = 25) (No... |
| Document |
 TJ100F06M3L Data Sheet
PDF 290.03KB |
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