IRF821 |
Part Number | IRF821 |
Manufacturer | Harris |
Description | These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdo... |
Features |
• 2.2A and 2.5A, 450V and 500V • rDS(ON) = 3.0Ω and 4.0Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Ordering Information D PART NUMBER IRF820 IRF821 IRF822 IRF823 PACKAGE TO-220AB TO-220AB TO-220AB TO-220AB BRAND IRF820 IRF821 IRF822 IRF823 S G NOTE: When ordering, use the entire part number. Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) CAUTION: These devices ... |
Document |
IRF821 Data Sheet
PDF 44.37KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IRF820 |
ART CHIP |
N-Channel Power MOSFET | |
2 | IRF820 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
3 | IRF820 |
Motorola Inc |
Power MOSFET | |
4 | IRF820 |
STMicroelectronics |
N-CHANNEL MOSFET | |
5 | IRF820 |
Intersil Corporation |
N-Channel Power MOSFET | |
6 | IRF820 |
International Rectifier |
Power MOSFET |