Busque con el número de pieza junto con el fabricante o la descripción
2SC1972 |
Click to view a larger image
| Part Number | 2SC1972 |
| Manufacturer | ASI |
| Description | The ASI 2SC1972 is Designed for RF power amplifiers on VHF band mobile radio applications. FEATURES INCLUDE: • • • Replaces Original 2SC1972 in Most Applications High Gain Reduces Drive Requirements... |
| Features |
INCLUDE:
• • • Replaces Original 2SC1972 in Most Applications High Gain Reduces Drive Requirements Economical TO-220CE Package PACKAGE STYLE TO-220AB (COMMON EMITTER) MAXIMUM RATINGS IC VCBO PDISS TSTG θJC 3.5 A 35 V 25 W @ TC = 25 °C -55 °C to +175 °C 6.0 °C/W 1 = BASE 2 = EMITTER 3 = COLLECTOR TAB = EMITTER CHARACTERISTICS SYMBOL BVCEO BVCBO BVEBO ICBO IEBO hFE ηC POUT IC = 50 mA IC = 10 mA IE = 10 mA TC = 25 °C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM 17 35 4.0 100 500 UNITS V V V µA µA --% W VCES = 25 V VEB = 3.0 V VCE = 10 V VCC = 13.5 V IC = 100 mA PIN = 2.5 W f =175 MHz 10 60 14 ... |
| Document |
 2SC1972 Data Sheet
PDF 54.02KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC1970 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 2 | 2SC1971 |
Mitsubishi Electric Semiconductor |
NPN Transistor |
|
| 3 | 2SC1971 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 4 | 2SC1971 |
Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR |
|
| 5 | 2SC1972 |
Mitsubishi Electric Semiconductor |
NPN Transistor |
|
| 6 | 2SC1972 |
HGSemi |
Silicon NPN POWER TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
|