HGTG12N60D1D |
Part Number | HGTG12N60D1D |
Manufacturer | Intersil Corporation |
Description | The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conductio... |
Features |
• 12A, 600V • Latch Free Operation • Typical Fall Time <500ns • Low Conduction Loss • With Anti-Parallel Diode • tRR < 60ns Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. The diode used in parallel with the IGBT is an ultrafast (tRR < 60ns) with soft recovery characteristic. The IGBTs are ideal for many high voltag... |
Document |
HGTG12N60D1D Data Sheet
PDF 36.74KB |
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