40N06 |
Part Number | 40N06 |
Manufacturer | Din-Tek |
Description | N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 60 www.din-tek.jp DTU40N06 FEATURES ID (A) 40 rDS(on) (W) 0.016 @ VGS = 10 V D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 1... |
Features |
ID (A)
40
rDS(on) (W)
0.016 @ VGS = 10 V
D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested
TO-252
D
G G D S
Top View S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)b Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Repetitive Avalanche Energy (Duty Cycle v 1%) Maximum Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_C TC = 25_C TC = 125_C
Symbol
VDS VGS ID I... |
Document |
40N06 Data Sheet
PDF 1.19MB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 40N03 |
SeCoS |
N-Channel Enhancement Mode PowerMos FET | |
2 | 40N03GP |
Advanced Power Electronics |
N-channel Enhancement-mode Power MOSFET | |
3 | 40N03P |
Silicon Standard |
SSM40N03P | |
4 | 40N05 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
5 | 40N06 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
6 | 40N10 |
VBsemi |
N-Channel MOSFET |