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40N10 |
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| Part Number | 40N10 |
| Manufacturer | Inchange Semiconductor |
| Description | isc N-Channel MOSFET Transistor INCHANGE Semiconductor 40N10 ·FEATURES ·Drain Current ID= 40A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.04Ω(Max) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching power supplies,converters,AC an. |
| Features |
·Drain Current ID= 40A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.04Ω(Max) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching power supplies,converters,AC and DC motor controls ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 40 A IDM Drain Current-Single Plused 100 A PD Total Dissipation @TC=25℃ 150 W Tj Max. Operating Junctio. |
| Datasheet |
 40N10 Data Sheet
PDF 219.35KB |
| Distributor | Stock | Price | Buy |
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40N10 |
| Part Number | 40N10 |
| Manufacturer | DinTek |
| Title | DTU40N10 |
| Description | www.din-tek.jp DT81 N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY V(BR)DSS (V) 100 rDS(on) (Ω) 0.030 at VGS = 10 V 0.034 at VGS = 6 V ID (A) 40 37.5 FEATURES • TrenchFET® Power MOSFETS • 175 °C Junction Temperature • Low Thermal Resistance Package Available RoHS* COMPLIANT D TO-252 G G . |
| Features |
• TrenchFET® Power MOSFETS • 175 °C Junction Temperature • Low Thermal Resistance Package Available RoHS* COMPLIANT D TO-252 G G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175 °C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Maximum Pow. |
40N10 |
| Part Number | 40N10 |
| Manufacturer | CHONGQING PINGYANG |
| Title | N-CHANNEL MOSFET |
| Description | 40N10(F,B,H) 40A mps,100 Volts N-CHANNEL MOSFET FEATURE 40A,100V,RDS(ON)=40mΩ@VGS=10V/20A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability TO-220AB 40N10 ITO-220AB 40N10F TO-263 40N10B TO-262 40N10H Absolute Maximum Ratings(TC=25℃,unless oth. |
| Features |
40A,100V,RDS(ON)=40mΩ@VGS=10V/20A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability TO-220AB 40N10 ITO-220AB 40N10F TO-263 40N10B TO-262 40N10H Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(Note1) Single Pulse Avalanche Energy . |
40N10 |
| Part Number | 40N10 |
| Manufacturer | VBsemi |
| Title | N-Channel MOSFET |
| Description | 40N10-VB TO252 40N10-VB TO252 Datasheet N-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 100 0.030 at VGS = 10 V 0.035 at VGS = 4.5 V ID (A) 40 37 FEATURES • TrenchFET® Power MOSFETS • 175 °C Junction Temperature • Low Thermal Resistance Package Availabl. |
| Features |
• TrenchFET® Power MOSFETS • 175 °C Junction Temperature • Low Thermal Resistance Package Available RoHS* COMPLIANT D TO-252 GDS Top View G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Avalanch. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 40N10B |
CHONGQING PINGYANG |
N-CHANNEL MOSFET |
|
| 2 | 40N10F |
CHONGQING PINGYANG |
N-CHANNEL MOSFET |
|
| 3 | 40N10F7 |
STMicroelectronics |
N-channel Power MOSFET |
|
| 4 | 40N10H |
CHONGQING PINGYANG |
N-CHANNEL MOSFET |
|
| 5 | 40N120 |
IXYS Corporation |
IXEH40N120 |
|
| 6 | 40N120 |
ON Semiconductor |
IGBT |
|
| 7 | 40N120FL2 |
ON Semiconductor |
IGBT |
|
| 8 | 40N120IHL |
ON Semiconductor |
IGBT |
|
| 9 | 40N15 |
UNISONIC TECHNOLOGIES |
40A 150V N-CHANNEL POWER MOSFET |
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| 10 | 40N15 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
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Desde 2024. D4U Semiconductor.
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