2SC3512 Inchange Semiconductor Silicon NPN RF Transistor Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

2SC3512

Inchange Semiconductor
2SC3512
2SC3512 2SC3512
zoom Click to view a larger image
Part Number 2SC3512
Manufacturer Inchange Semiconductor
Description ·Low Noise and High Gain NF = 1.6 dB TYP. @f = 900 MHz PG = 10.5 dB TYP. @f = 900 MHz ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICA...
Features llector Cutoff Current VCB= 12V; IE= 0 ICEO Collector Cutoff Current VCE= 10V; RBE= ∞ IEBO Emitter Cutoff Current VEB= 1V; IC= 0 hFE DC Current Gain IC= 20mA ; VCE= 5V fT Current-Gain—Bandwidth Product IC= 20mA ; VCE= 5V COB Output Capacitance IE= 0 ; VCB= 5V;f= 1.0MHz PG Power Gain IC= 20mA; VCE= 5V; f= 900MHz NF Noise Figure IC= 5mA ; VCE= 5V; f= 900MHz MIN TYP. MAX UNIT 15 V 1.0 μA 1.0 μA 1.0 μA 50 250 6.0 GHz 1.2 1.6 pF 10.5 dB 1.6 dB NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. Th...

Document Datasheet 2SC3512 Data Sheet
PDF 176.18KB

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 2SC3510
Hitachi Semiconductor
Silicon NPN Transistor Datasheet
2 2SC3512
Hitachi Semiconductor
Silicon NPN Transistor Datasheet
3 2SC3512
Renesas
Silicon NPN Transistor Datasheet
4 2SC3513
Hitachi Semiconductor
Silicon NPN Transistor Datasheet
5 2SC3513
Kexin
Silicon NPN Epitaxial Transistor Datasheet
6 2SC3514
Inchange Semiconductor
Silicon NPN Power Transistor Datasheet
More datasheet from Inchange Semiconductor
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad