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2N3583 |
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| Part Number | 2N3583 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Contunuous Collector Current-IC= 1A ·Power Dissipation-PD=35W @TC= 25℃ ·Collector-Emitter Saturation Voltage: VCE(sat)= 5.0 V(Max)@ IC = 1A APPLICATIONS ·Designed for high-speed switching and linear ... |
| Features |
Sheet4U.co.kr/
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2N3583
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 200mA ; IB= 0
175
V
VCE(sat) VBE(on) ICEO ICEX
Collector-Emitter Saturation Voltage
IC= 1A; IB= 0.125A
B
5.0
V
Base-Emitter On Voltage
IC= 1A ; VCE= 10V
1.4
V
Collector Cutoff Current
VCE= 150V; IB= 0 VCE= 225V; VBE(off)= 1.5V VCE= 225V; VBE(off)= 1.5V,TC=150℃ VEB= 6V; IC=0
10 1.0 3.0 5.0
mA
Collector Cutoff Current
... |
| Document |
 2N3583 Data Sheet
PDF 227.61KB |
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