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2SB649 |
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| Part Number | 2SB649 |
| Manufacturer | SeCoS |
| Description | 2SB649/2SB649A Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free PNP Type Plastic Encapsulate Transistors TO-126C 8.0±0.2 2.0±0.2 4.14±0.1 3.2±0.2 FEAT... |
| Features |
Power smplifier applications Power dissipation PCM : 1 W £¨ Tamb=25¡æ £© Collector current ICM : - 1.5 A Collector-base voltage V(BR)CBO : -180 V Collector-emitter voltage VCEO 2SB649 : -120 V 2SB649A : -160 V Operating and storage junction temperature range TJ£¬Tstg: -55¡æ to +150 ELECTRICAL CHARACTERISTICS£¨ Tamb=25¡æ
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) * DC current gain hFE(2) * Collector-emitter saturation voltag... |
| Document |
 2SB649 Data Sheet
PDF 307.77KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB642 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor |
|
| 2 | 2SB643 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor |
|
| 3 | 2SB644 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor |
|
| 4 | 2SB645 |
INCHANGE |
PNP Transistor |
|
| 5 | 2SB645 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 6 | 2SB646 |
Hitachi |
Silicon PNP Epitaxial Transistor |
|
Desde 2024. D4U Semiconductor.
|