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2SC3070 |
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| Part Number | 2SC3070 |
| Manufacturer | Sanyo Semicon Device |
| Description | Ordering number:EN923G NPN Epitaxial Planar Silicon Transistor 2SC3070 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications · Low-frequency, general-purpose amplifier., variou... |
| Features |
· High DC current gain (hFE=800 to 3200). · Large current capacity (IC=1.2A). · Low collector-to-emitter saturation voltage (VCE(sat)=0.5V max). · High VEBO (VEBO≥15V). EIAJ : SC-51 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Conditions B : Base C : Collector E : Emitter SANYO : MP Ratings 30 25 15 1.2 2 240 1 150 –55 to +150 Unit V... |
| Document |
 2SC3070 Data Sheet
PDF 120.30KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC3071 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 2 | 2SC3072 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 3 | 2SC3072 |
Kexin |
Silicon NPN Transistor |
|
| 4 | 2SC3073 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 5 | 2SC3074 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 6 | 2SC3074 |
INCHANGE |
TO-251 NPN Transistor |
|
Desde 2024. D4U Semiconductor.
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