Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
2SC3074 |
| Part Number | 2SC3074 |
| Manufacturer | Kexin |
| Title | Silicon NPN Transistor |
| Description | SMD Type Silicon NPN Epitaxial 2SC3074 TO-252 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low collector saturation voltage. High speed switching time. +0.2 9.70 -0.2 +0.15 1.50 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 . |
| Features | Low collector saturation voltage. High speed switching time. +0.2 9.70 -0.2 +0.15 1.50 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base volta. |
2SC3074 |
| Part Number | 2SC3074 |
| Manufacturer | INCHANGE |
| Title | TO-252 NPN Transistor |
| Description | ·With TO-252(DPAK) packaging ·Excellent linearity of hFE ·Low collector-to-emitter saturation voltage ·Fast switching speed ·Complementary to 2SA1244 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Relay drivers, high-speed inverters , converters an. |
| Features | DITIONS BVCEO Collector-Emitter Breakdown Voltage IC=10mA; IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC=3A; IB=0.15A VBE(sat) Base-Emitter Saturation Voltage IC=3A; IB=0.15A ICBO Collector Cutoff Current VCB= 40V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC=0 hFE-1 DC Current Cain IC= 1A ; VCE= 1V hFE-2 DC Current Cain IC= 3A ; VCE= 1V hFE-1Classifications O Y 70-1. |
2SC3074 |
| Part Number | 2SC3074 |
| Manufacturer | Toshiba Semiconductor |
| Title | Silicon NPN Transistor |
| Description | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3074 2SC3074 High Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 μs (typ.) • Complementary to 2SA1244 Absolute Maximum Ratings (. |
| Features | tage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2010-08-27 Electrical Characteristics (Ta = 25°C) 2SC3074 Characteristics Collecto. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC3070 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 2 | 2SC3071 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 3 | 2SC3072 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 4 | 2SC3072 |
Kexin |
Silicon NPN Transistor |
|
| 5 | 2SC3073 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 6 | 2SC3075 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 7 | 2SC3075 |
Kexin |
NPN Silicon Transistor |
|
| 8 | 2SC3076 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 9 | 2SC3076 |
INCHANGE |
NPN Transistor |
|
| 10 | 2SC3076 |
Kexin |
Silicon NPN Transistor |
|
Desde 2024. D4U Semiconductor.
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