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2SC3011 |
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| Part Number | 2SC3011 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3011 2SC3011 UHF~C Band Low Noise Amplifier Applications Unit: mm · High gain: |S21e|2 = 12dB (typ.) · Low noise figure: NF = 2.3dB (typ.), ... |
| Features |
r cut-off current Emitter cut-off current Collecter-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collecter output capacitance Reverse transfer capacitance Input capacitance
ICBO IEBO V (BR) CEO hFE VCE (sat) VBE (sat) Cob Cre Cib
VCB = 10 V, IE = 0 VEB = 1.0 V, IC = 0 IC = 0.5 mA, IB = 0 VCE = 5 V, IC = 10 mA
IC = 10 mA, IB = 1 mA
VCB = 5 V, IE = 0, f = 1 MHz
VEB = 0, IC = 0, f = 1 MHz
Note: Cre is measured by 3-terminal method with capacitance bridge.
Min Typ. Max Unit
¾ ¾ 1.0
¾ ¾ 1.0
7 ¾¾
30 120 ¾
¾ 0.1 ¾
¾ 0.87 ¾
(... |
| Document |
 2SC3011 Data Sheet
PDF 166.59KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC3011 |
Kexin |
Silicon NPN Epitaxial Transistor |
|
| 2 | 2SC3012 |
INCHANGE |
NPN Transistor |
|
| 3 | 2SC3012 |
SavantIC |
Silicon power Transistor |
|
| 4 | 2SC3017 |
Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR |
|
| 5 | 2SC3018 |
Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR |
|
| 6 | 2SC3019 |
Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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