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2SB1389 |
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| Part Number | 2SB1389 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SB1389 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter ID 4.5 kΩ (Typ) 500 Ω (Typ) 3 12 3 2SB1389 Absolute Maximum Rat... |
| Features |
C = –4 A, IB = –40 mA*1 I C = –2 A, IB = –4 mA*1 I C = –4 A, IB = –40 mA*1 I D = 4 A*1 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward voltage Note: 1. Pulse test. hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VD See switching characteristic curve of 2SB1101. 2 2SB1389 Maximum Collector Dissipation Curve 30 Collector power dissipation Pc (W) –20 –10 Collector Current IC (A) –5 –2 –1.0 –0.5 –0... |
| Document |
 2SB1389 Data Sheet
PDF 35.32KB |
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