2SB1030 |
Part Number | 2SB1030 |
Manufacturer | Panasonic Semiconductor |
Description | Transistor 2SB1030, 2SB1030A Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD1423 and 2SD1423A Unit: mm 4.0±0.2 3.0±0.2 s Features q q s Absolute Maximum Ratin... |
Features |
q q
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB1030 2SB1030A 2SB1030 VCBO VCEO VEBO ICP IC PC Tj Tstg Symbol
(Ta=25˚C)
Ratings –30 –60 –25 –50 –7 –1 – 0.5 300 150 –55 ~ +150 Unit marking +0.2 0.45 –0.1 0.7±0.1 15.6±0.5 Optimum for high-density mounting. Allowing supply with the radial taping. V 1 2 3 emitter voltage 2SB1030A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V 1.27 1.27 V A A mW ˚C ˚C 1:Emitter 2:Collector 3:Base 2.54±0.15 EIAJ:SC –72 New S Type P... |
Document |
2SB1030 Data Sheet
PDF 38.12KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SB1030A |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor | |
2 | 2SB1031 |
Hitachi Semiconductor |
Silicon PNP Transistor | |
3 | 2SB1031 |
INCHANGE |
PNP Transistor | |
4 | 2SB1031K |
Hitachi Semiconductor |
Silicon PNP Transistor | |
5 | 2SB1032 |
Hitachi Semiconductor |
Silicon PNP Transistor | |
6 | 2SB1032 |
INCHANGE |
PNP Transistor |