Busque con el número de pieza junto con el fabricante o la descripción
3N166 |
Click to view a larger image
| Part Number | 3N166 |
| Manufacturer | Micross |
| Description | 3N166 P-CHANNEL MOSFET The 3N166 is a monolithic dual enhancement mode P-Channel Mosfet FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N166 ABSOLUTE MAXIMUM RATINGS1@ 25°C (unless otherwise noted) Maxi... |
| Features |
DIRECT REPLACEMENT FOR INTERSIL 3N166 ABSOLUTE MAXIMUM RATINGS1@ 25°C (unless otherwise noted) Maximum Temperatures The hermetically sealed TO-78 package is well suited Storage Temperature ‐65°C to +200°C for high reliability and harsh environment applications. Operating Junction Temperature ‐55°C to +150°C Lead Temperature (Soldering, 10 sec.) +300°C (See Packaging Information). Maximum Power Dissipation Continuous Power Dissipation (one side) 300mW 3N166 Features: Total Derating above 25°C 4.2 mW/°C MAXIMUM CURRENT Very high Input Impedance Drain Current 50mA Low Capacita... |
| Document |
 3N166 Data Sheet
PDF 377.20KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 3N161 |
Intersil Corporation |
DIODE PROTECTED P-CHANNEL ENGANCEMENT MODE MOSFET GENERAL PUROPSE AMPLIFIER/SWITCH |
|
| 2 | 3N163 |
Siliconix |
P-Channel Enhancement-Mode MOS Transistors |
|
| 3 | 3N163 |
Micross |
High Speed Switch |
|
| 4 | 3N164 |
Siliconix |
P-Channel Enhancement-Mode MOS Transistors |
|
| 5 | 3N164 |
Micross |
High Speed Switch |
|
| 6 | 3N165 |
Calogic LLC |
Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier |
|
Desde 2024. D4U Semiconductor.
|