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2N3955 |
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| Part Number | 2N3955 |
| Manufacturer | Micross |
| Description | 2N3955 MONOLITHIC DUAL N-CHANNEL JFET The 2N3955 is a Low Noise, Low Drift, Monolithic Dual N-Channel JFET The 2N3955 family are matched JFET pairs for differential amplifiers. The 2N3955 family of g... |
| Features |
LOW DRIFT LOW LEAKAGE LOW NOISE ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) |∆ VGS1‐2 /∆T|= 5µV/°C max. IG = 20pA TYP. en = 10nV/√Hz TYP.
2N3955 Applications:
Wideband Differential Amps High Input Impedance Amplifiers
Maximum Temperatures Storage Temperature ‐65°C to +200°C Operating Junction Temperature +150°C Maximum Voltage and Current for Each Transistor – Note 1 ‐VGSS Gate Voltage to Drain or Source 60V ‐VDSO Drain to Source Voltage 60V ‐IG(f) Gate Forward Current 50mA Maximum Power Dissipation Device Dissipation @ Free Air – Total ... |
| Document |
 2N3955 Data Sheet
PDF 307.17KB |
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Desde 2024. D4U Semiconductor.
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