UPD5747T6J |
Part Number | UPD5747T6J |
Manufacturer | NEC |
Description | The μPD5747T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret condenser microphone. This device exhibits low noise and high voltage gain characte... |
Features |
• Low Noise • High Gain : NV = −101 dBV TYP. @ VDD = 1.5 V, Cin = 3 pF, RL = 2.2 kΩ : NV = −102 dBV TYP. @ VDD = 1.5 V, Cin = 5 pF, RL = 2.2 kΩ : GV = +5.7 dB TYP. @ VDD = 1.5 V, Cin = 3 pF, RL = 2.2 kΩ : GV = +7.7 dB TYP. @ VDD = 1.5 V, Cin = 5 pF, RL = 2.2 kΩ • Low Consumption Current : IDD = 190 μA TYP. @ VDD = 1.5 V, RL = 2.2 kΩ • Built-in the capacitor for RF noise immunity • High ESD voltage • 3-pin thin-type lead-less minimold (1.2 × 1.0 × 0.33 mm) APPLICATIONS • Microphone, Sensor, etc. ORDERING INFORMATION Part Number Order Number Package 3-pin thin-type leadless minimold (Pb-Free) ... |
Document |
UPD5747T6J Data Sheet
PDF 90.13KB |
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