TIC226N |
Part Number | TIC226N |
Manufacturer | Comset Semiconductor |
Description | This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarity of gate signal with main Terminal 2 at either polarity. ABSOLUTE MA... |
Features |
temperature (pulse width ≤200 2.2 PGM µs) Average gate power dissipation at (or 0.9 PG(AV) below) 85°C case (see Note5) www.DataSheet4U.com Operating case temperature range -40 to +110 TC Storage temperature range -40 to +125 Tstg Lead temperature 1.6 mm from case for 10 230 TL seconds
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SEMICONDUCTORS
TIC226A, TIC226B, TIC226C, TIC226D, TIC226E, TIC226M, TIC226N, TIC226S
Notes: 1. 2. 3. 4. 5. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C de... |
Document |
TIC226N Data Sheet
PDF 230.22KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | TIC226 |
BOURNS |
SILICON TRIACS | |
2 | TIC226 |
INCHANGE |
Triac | |
3 | TIC226A |
Comset Semiconductor |
SILICON BIDIRECTIONAL TRIODE THYRISTOR | |
4 | TIC226B |
Comset Semiconductor |
SILICON BIDIRECTIONAL TRIODE THYRISTOR | |
5 | TIC226C |
Comset Semiconductor |
SILICON BIDIRECTIONAL TRIODE THYRISTOR | |
6 | TIC226D |
BOURNS |
SILICON TRIACS |