IRF7342D2 |
Part Number | IRF7342D2 |
Manufacturer | International Rectifier |
Description | The FETKYTM family of Co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator and power management applications. HEXFETs utilize ad... |
Features |
iew
SO-8
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Parameter
ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current À Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Á Junction and Storage Temperature Range
Maximum
-3.4 -2.7 -27 2.0 1.3 16 ± 20 -5.0 -55 to +150
Units
A
W mW/°C V V/ns °C
Thermal Resistance
Symbol
RθJL RθJA RθJA
Parameter
Junction-to-Drain Lead, MOSFET Junction-to-Ambient , M... |
Document |
IRF7342D2 Data Sheet
PDF 163.53KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IRF7342D2PBF |
International Rectifier |
MOSFET & Schottky Diode | |
2 | IRF7342 |
Infineon |
Power MOSFET | |
3 | IRF7342 |
International Rectifier |
Power MOSFET | |
4 | IRF7342PBF |
International Rectifier |
Power MOSFET | |
5 | IRF7342PbF |
Infineon |
Power MOSFET | |
6 | IRF7342QPBF |
International Rectifier |
Power MOSFET |