MRF8S26060HSR3 Motorola Semiconductor RF Power Field Effect Transistors Datasheet. existencias, precio

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MRF8S26060HSR3

Motorola Semiconductor
MRF8S26060HSR3
MRF8S26060HSR3 MRF8S26060HSR3
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Part Number MRF8S26060HSR3
Manufacturer Motorola Semiconductor
Description Part Number MPZ2012S300AT000 ATC100B5R6CT500XT ATC100B0R3BT500XT C5750X7R1H106KT C5750JF1H226ZT T491X226K035AT C3225X7R2A684KT MCGPR63V227M10X21 C2012X7R2102KT CRCW120612R0FKEA CuClad 25064-0300-55-22...
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate-Source Voltage Range for Improved Class C Operation
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Drain-Source Voltage Gate-Source Voltage Operating Voltage Storage Temperature Rang...

Document Datasheet MRF8S26060HSR3 Data Sheet
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