MRF8S26120HSR3 Transistor Datasheet, Distribuidor, stock y mejor precio

Part Number	MRF8S26120HSR3
Manufacturer	Motorola
Title	RF Power Field Effect Transistor
Description	22 μF, 35 V Tantalum Capacitor 330 nF, 100 V Chip Capacitor 15 nF, 100 V Chip Capacitor 2.2 μF, 100 V Chip Capacitors 22 μF, 50 V Chip Capacitors 470 μF, 63 V Electrolytic Capacitors 27 pF Chip Capacitors 0.8 pF Chip Capacitor 1 kΩ, 1/4 W Chip Resistor 10 kΩ, 1/4 W Chip Resistor 7.5 Ω, 1/4 W Chip Re.
Features	• 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • Designed for Digital Predistortion Error Correction Systems • Optimized for Doherty Applicati.

No.	Parte #	Fabricante	Descripción
1	MRF8S26120HR3	Motorola	RF Power Field Effect Transistor
2	MRF8S26120HR3	Motorola	RF Power Field Effect Transistor
3	MRF8S26060HR3	Motorola Semiconductor	RF Power Field Effect Transistors
4	MRF8S26060HSR3	Motorola Semiconductor	RF Power Field Effect Transistors
5	MRF8S21140HR3	NXP	RF Power Field Effect Transistors
6	MRF8S21140HSR3	NXP	RF Power Field Effect Transistors
7	MRF8S21200HR6	Freescale Semiconductor	RF Power Field Effect Transistors
8	MRF8S21200HSR6	Freescale Semiconductor	RF Power Field Effect Transistors
9	MRF8S18120HR3	Freescale Semiconductor	RF Power Field Effect Transistors
10	MRF8S18120HSR3	Freescale Semiconductor	RF Power Field Effect Transistors

MRF8S26120HSR3 Datasheet. existencias, precio