MRFG35003N6T1 Freescale Semiconductor RF Power Field Effect Transistor Datasheet. existencias, precio

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MRFG35003N6T1

Freescale Semiconductor
MRFG35003N6T1
MRFG35003N6T1 MRFG35003N6T1
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Part Number MRFG35003N6T1
Manufacturer Freescale Semiconductor
Description MRFG35003N6T1 RF Device Data Freescale Semiconductor 3 C7 C6 + C11 R1 C4 C10 C9 C8 C5 C17 C16 C14 C18 + C19 C20 C21 C22 C3 C15 C12 C2 www.DataSheet4U.com C1 C13 C23 C24 C28 C27 C26 C25 MR...
Features Power Storage Temperature Range Channel Temperature (1) Symbol VDSS PD VGS Pin Tstg Tch TC Value 8 22.7 (2) 0.15 (2) -5 24 - 65 to +150 175 - 20 to +85 Unit Vdc W W/°C Vdc dBm °C °C °C Operating Case Temperature Range Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value 6.6 (2) Unit °C/W Table 3. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 1 Package Peak Temperature 260 Unit °C 1. For reliable operation, the operating channel temperature should not exceed 150°C. 2. Simulated. © Freesca...

Document Datasheet MRFG35003N6T1 Data Sheet
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