MRFG35002N6AT1 Freescale Semiconductor Gallium Arsenide PHEMT RF Power Field Effect Transistor Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

MRFG35002N6AT1

Freescale Semiconductor
MRFG35002N6AT1
MRFG35002N6AT1 MRFG35002N6AT1
zoom Click to view a larger image
Part Number MRFG35002N6AT1
Manufacturer Freescale Semiconductor
Description 13 pF Chip Capacitors Part Number ATC100A130JT500XT Manufacturer ATC MRFG35002N6AT1 RF Device Data Freescale Semiconductor 3 C13 C12 C11 C10 C9 C8 C7 R1 C5 C6 C18 C17 C16 C14 www.DataSheet4U...
Features
• Excellent Phase Linearity and Group Delay Characteristics
• High Gain, High Efficiency and High Linearity
• RoHS Compliant
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. MRFG35002N6AT1 3.5 GHz, 1.5 W, 6 V POWER FET GaAs PHEMT CASE 466 - 03, STYLE 1 PLD - 1.5 PLASTIC Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage RF Input Power Storage Temperature Range Channel Temperature (1) Symbol VDSS VGS Pin Tstg Tch Value 8 -5 22 - 65 to +150 175 Unit Vdc Vdc dBm °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction t...

Document Datasheet MRFG35002N6AT1 Data Sheet
PDF 214.84KB

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 MRFG35002N6T1
Freescale Semiconductor
Gallium Arsenide PHEMT RF Power Field Effect Transistor Datasheet
2 MRFG35003M6T1
Motorola
RF Power Field Effect Transistor Datasheet
3 MRFG35003MT1
Motorola
RF Power Field Effect Transistor Datasheet
4 MRFG35003MT1
Freescale Semiconductor
RF Power Field Effect Transistors Datasheet
5 MRFG35003N6T1
Freescale Semiconductor
RF Power Field Effect Transistor Datasheet
6 MRFG35003NT1
Freescale Semiconductor
RF Power Field Effect Transistors Datasheet
More datasheet from Freescale Semiconductor
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad