MRFG35002N6AT1 |
Part Number | MRFG35002N6AT1 |
Manufacturer | Freescale Semiconductor |
Description | 13 pF Chip Capacitors Part Number ATC100A130JT500XT Manufacturer ATC MRFG35002N6AT1 RF Device Data Freescale Semiconductor 3 C13 C12 C11 C10 C9 C8 C7 R1 C5 C6 C18 C17 C16 C14 www.DataSheet4U... |
Features |
• Excellent Phase Linearity and Group Delay Characteristics • High Gain, High Efficiency and High Linearity • RoHS Compliant • In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. MRFG35002N6AT1 3.5 GHz, 1.5 W, 6 V POWER FET GaAs PHEMT CASE 466 - 03, STYLE 1 PLD - 1.5 PLASTIC Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage RF Input Power Storage Temperature Range Channel Temperature (1) Symbol VDSS VGS Pin Tstg Tch Value 8 -5 22 - 65 to +150 175 Unit Vdc Vdc dBm °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction t... |
Document |
MRFG35002N6AT1 Data Sheet
PDF 214.84KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | MRFG35002N6T1 |
Freescale Semiconductor |
Gallium Arsenide PHEMT RF Power Field Effect Transistor | |
2 | MRFG35003M6T1 |
Motorola |
RF Power Field Effect Transistor | |
3 | MRFG35003MT1 |
Motorola |
RF Power Field Effect Transistor | |
4 | MRFG35003MT1 |
Freescale Semiconductor |
RF Power Field Effect Transistors | |
5 | MRFG35003N6T1 |
Freescale Semiconductor |
RF Power Field Effect Transistor | |
6 | MRFG35003NT1 |
Freescale Semiconductor |
RF Power Field Effect Transistors |