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2SC1970 |
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| Part Number | 2SC1970 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High Power Gain- : Gpe≥ 9.2dB,f= 175MHz, PO= 1W; VCC= 13.5V ·High Reliability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ... |
| Features |
NGE Semiconductor
2SC1970
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-Base Breakdown Voltage
IC= 5mA, IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA, IC= 0
ICBO
Collector Cutoff Current
VCB= 25V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 3V; IC= 0
hFE
DC Current Gain
IC= 0.1A; VCE= 10V
PO
Output Power
ηC
Collector Efficiency
VCC= 13.5V; Pin= 0.12W; f= 175MHz
MIN TYP. MAX UNIT
40
V
17
V
4
V
0.1 mA
0.1 mA
10
180
1
1.2
W
50
60
%
... |
| Document |
 2SC1970 Data Sheet
PDF 191.18KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC1971 |
Mitsubishi Electric Semiconductor |
NPN Transistor |
|
| 2 | 2SC1971 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 3 | 2SC1971 |
Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR |
|
| 4 | 2SC1972 |
Mitsubishi Electric Semiconductor |
NPN Transistor |
|
| 5 | 2SC1972 |
ASI |
NPN SILICON RF POWER TRANSISTOR |
|
| 6 | 2SC1972 |
HGSemi |
Silicon NPN POWER TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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