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STW18NM60N |
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| Part Number | STW18NM60N |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s ... |
| Features |
Order codes
VDSS (@Tjmax)
RDS(on) max.
ID
PW
STB18NM60N STF18NM60N STI18NM60N STP18NM60N STW18NM60N
650 V
110 W 30 W < 0.285 Ω 13 A 110 W
■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application Switching applications Description These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters... |
| Document |
 STW18NM60N Data Sheet
PDF 1.11MB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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