IXTQ100N25P |
Part Number | IXTQ100N25P |
Manufacturer | IXYS Corporation |
Description | PolarHTTM Power MOSFET IXTK 100N25P IXTQ 100N25P IXTT 100N25P N-Channel Enhancement Mode Avalanche Rated V= DSS ID25 = ≤ RDS(on) 250 V 100 A 27 mΩ Symbol Test Conditions Maximum Ratings TO-264 ... |
Features |
l International standard packages l Unclamped Inductive Switching (UIS)
rated l Low package inductance
- easy to drive and to protect
Advantages
l Easy to mount l Space savings l High power density
© 2006 IXYS All rights reserved
DS99118E(12/05)
Symbol
gfs C
iss
C oss
C rss
td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS R
thCS
IXTK 100N25P IXTQ 100N25P IXTT 100N25P
Test Conditions
Characteristic Values
(TJ = 25° C, unless otherwise specified) Min. Typ. Max.
TO-3P (IXTQ) Outline
VDS= 10 V; ID = 0.5 ID25, pulse test
40 56
S
V = 0 V, V = 25 V, f = 1 MHz
GS
DS
6300
pF
1150
pF
2... |
Document |
IXTQ100N25P Data Sheet
PDF 265.34KB |
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