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| Part Number | IXTQ102N20T |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | IXTQ102N20T |
| Manufacturer | IXYS |
| Title | Power MOSFET |
| Description | Preliminary Technical Information TrenchHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH102N20T IXTQ102N20T IXTV102N20T VDSS = ID25 = RDS(on) ≤ 200 102 23 V A mΩ Symbol VDSS VGSM I D25 ILRMS IDM I AS EAS dv/dt PD TJ TJM Tstg T L TSOLD Md F C Weight Test Conditions TJ = 25°C t. |
| Features | z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z 175 °C Operating Temperature Advantages z Easy to mount z Space savings z High power density © 2007 IXYS CORPORATION, All rights reserved DS99821 (04/07) IXTH102N20T IXTQ102N20T IXTV102N20T Symbol Test Conditions (T = 25°C unless otherwise specified) J gfs VDS= 10 V; ID = 0.5 ID25, Note 1 . |
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Desde 2024. D4U Semiconductor.
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