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MTP3N120E |
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| Part Number | MTP3N120E |
| Manufacturer | Motorola |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP3N120E/D Designer's Data Sheet www.DataSheet4U.com TMOS E-FET .™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon G... |
| Features |
Diode Recovery Time Comparable to Discrete Fast Recovery Diode * See App. Note AN1327 — Very Wide Input Voltage Range; Off –line Flyback Switching Power Supply G S MTP3N120E Motorola Preferred Device TMOS POWER FET 3.0 AMPERES 1200 VOLTS RDS(on) = 5.0 OHM ® D CASE 221A –06, Style 5 TO –220AB MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –Source Voltage Drain –Gate Voltage (RGS = 1.0 MΩ) Gate –Source Voltage — Continuous Gate –Source Voltage — Non –Repetitive (tp ≤ 50 ms) Drain Current — Continuous @ 25°C Drain Current — Continuous @ 100°C Drain Current — Single Pulse (tp ≤ 10 µ... |
| Document |
 MTP3N120E Data Sheet
PDF 200.62KB |
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