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70N03 |
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| Part Number | 70N03 |
| Manufacturer | General Semiconductor |
| Description | GFB70N03 N-Channel Enhancement-Mode MOSFET H C N T E TRE NF E G TO-263AB 0.380 (9.65) 0.420 (10.67) 0.21 (5.33) Min. D VDS 30V RDS(ON) 8mΩ ID 70A D ® G 0.160 (4.06) 0.190 (4.83) 0.045 (1.14) 0.0... |
| Features |
• Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for Low Voltage DC/DC Converters • Fast Switching for High Efficiency Maximum Ratings and Thermal Characteristics (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(1) Pulsed Drain Current Maximum Power Dissipation TC = 25°C TC = 100°C Symbol VDS VGS ID IDM PD TJ, Tstg TL RθJC (2) C = 25°C unless otherwise noted) Limit 30 ± 20 Unit V 70 200 62.5 25 –55 to 150 275 2.0 40 A W °C °C °C/W °C/W Operating Junction and Storage Temperature Range Lead Temp... |
| Document |
 70N03 Data Sheet
PDF 118.03KB |
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