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| Part Number | 70N06 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 70N06 |
| Manufacturer | INCHANGE |
| Title | TO-220F N-Channel MOSFET Transistor |
| Description | ·Drain Current ID=70A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 14mΩ(Max) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in applications such as swithing Reg. |
| Features | ECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 0.25mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 70A IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 60V; VGS= 0 VSD Diode Forward Voltage IF= 70A; VGS= 0 MIN M. |
| Part Number | 70N06 |
| Manufacturer | UTC |
| Title | N-CHANNEL POWER MOSFET |
| Description | The UTC 70N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application. TO-220 1 TO-220F FEATURES * RDS(ON) = 15mΩ@VGS = 10 V * Ultra low gate charge ( typica. |
| Features | * RDS(ON) = 15mΩ@VGS = 10 V * Ultra low gate charge ( typical 90 nC ) * Low reverse transfer Capacitance ( CRSS = typical 80 pF ) * Fast switching capability * 100% avalanche energy specified * Improved dv/dt capability *Pb-free plating product number: 70N06L SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Order Number Normal Lead Free Plating 70N06-TA3-T 70N06L-TA3-T 70N06-TF3-T 70N06L-T. |
| Part Number | 70N06 |
| Manufacturer | Inchange Semiconductor |
| Title | TO-3 N-Channel MOSFET Transistor |
| Description | ·Drain Current ID= 70A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Fast Switching Speed ·APPLICATIONS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage ID Drain Current-continuous@ TC=. |
| Features | ARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VSD Diode Forward On-Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance CONDITIONS VGS= 0; ID= 250µA VDS= VGS; ID=1mA IF=70A ;VGS= 0 VGS= 10V; ID=35A VGS= ±20V;VDS= 0 VDS=. |
| Part Number | 70N06 |
| Manufacturer | Fairchild Semiconductor |
| Title | RFP70N06 |
| Description | Data Sheet September 2013 RFP70N06 N-Channel Power MOSFET 60V, 70A, 14 mΩ These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance.. |
| Features |
• 70A, 60V • rDS(on) = 0.014Ω • Temperature Compensated PSPICE® Model • Peak Current vs Pulse Width Curve • UIS Rating Curve (Single Pulse) • 175oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S Packaging JEDEC TO-220AB DRAIN (FLANGE) SOURCE DRAIN GATE ©2005 Fairchild Semiconductor Corporation RFP70N06 Rev.. |
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| 1 | 70N03 |
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| 2 | 70N03 |
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| 3 | 70N03 |
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N-Channel MOSFET |
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| 4 | 70N03 |
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| 5 | 70N03 |
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| 6 | 70N03G |
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| 7 | 70N08 |
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| 8 | 70N10 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
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| 9 | 70N10L |
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|
| 10 | 70N20 |
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FDA70N20 |
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