IXFM13N50 |
Part Number | IXFM13N50 |
Manufacturer | IXYS Corporation |
Description | HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH 13 N50 VDSS = 500 V IXFM 13 N50 ID (cont) = 13 A RDS(on) = 0.4 W trr £ 250 ns www.DataSheet4U.com Symbol... |
Features |
International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic Rectifier
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Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2 4 ±100 TJ = 25°C TJ = 125°C 200 1 0.4 V V nA mA mA W
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 250 mA VDS = VGS, ID = 2.5 mA VGS = ±20 VDC, VDS = 0 VDS = 0.8 • VDSS VGS = 0 V Applications DC-DC converters Uninterruptible Power Supplies (UPS) Battery ... |
Document |
IXFM13N50 Data Sheet
PDF 116.50KB |
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