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2SC5851 |
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| Part Number | 2SC5851 |
| Manufacturer | Renesas (https://www.renesas.com/) Technology |
| Description | www.DataSheet4U.com To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of... |
| Features |
• High frequency amplifier Outline CMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC5851 www.DataSheet4U.com Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC* Tj Tstg Ratings 30 30 5 100 150 150 −55 to +125 Unit V V V mA mW °C °C *Value on the glass epoxy board (10 mm x 10 mm x 0.7 mm) Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 30 30 5 1 Typ ... |
| Document |
 2SC5851 Data Sheet
PDF 133.89KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC5850 |
Renesas Technology |
Silicon NPN Epitaxial Type Transistor |
|
| 2 | 2SC5852 |
Renesas Technology |
Silicon NPN epitaxial planar type Transistor |
|
| 3 | 2SC5855 |
Toshiba |
Silicon NPN Transistor |
|
| 4 | 2SC5855 |
INCHANGE |
NPN Transistor |
|
| 5 | 2SC5856 |
Toshiba Semiconductor |
SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR |
|
| 6 | 2SC5857 |
Toshiba Semiconductor |
SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR |
|
| 7 | 2SC5858 |
Toshiba Semiconductor |
SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR |
|
| 8 | 2SC5859 |
Toshiba |
SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR |
|
| 9 | 2SC5800 |
Renesas |
NPN SILICON RF TRANSISTOR |
|
| 10 | 2SC5801 |
NEC |
NPN TRANSISTOR |
|
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