| Part Number | 2SC5858 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | 2SC5858 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5858 HORIZONTAL DEFLECTION OUTPUT FOR HDTV, DIGITAL TV, PROJECTION TV Unit: mm z High Voltage z Low Saturation Voltage z High Speed : VCBO = 1700 V : VCE (sat) = 1.5 V (Max) : tf(2) = 0.1 μs (Typ.) ABSOLUTE MAXIMUM RATINGS (Tc ... |
| Features |
e, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-22
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut−off Current Emitter Cut−off Current Collector − Emitter Breakdown Voltage
DC Current Gain
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
Transition Frequency... |
| Document |
 2SC5858 datasheet pdf (194.32KB)
|
| Part Number | 2SC5859 |
| Manufacturer | Toshiba |
| Title | SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR |
| Description | 2SC5859 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5859 HORIZONTAL DEFLECTION OUTPUT FOR HDTV, DIGITAL TV, PROJECTION TV High Vo. |
| Features |
Storage Time Fall Time VCE (sat) VBE (sat) fT Cob tstg(1) tf(1) tstg(2) tf(2) TEST CONDITION VCB = 1700 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 2 A VCE = 5 V, IC = 8 A VCE = 5 V, IC = 18 A IC = 18 A, IB = 4.5 A IC = 18 A, IB = 4.5 A VCE = 10 V, IC = 0.1 A VCB = 10 V, IE = 0, . |
| Document | 2SC5859 datasheet pdf |
| Part Number | 2SC5857 |
| Manufacturer | Toshiba Semiconductor |
| Title | SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR |
| Description | www.DataSheet4U.com 2SC5857 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5857 HORIZONTAL DEFLECTION OUTPUT FOR HDTV, DIGITAL TV, . |
| Features |
itching Time Fall Time Storage Time Fall Time VCE (sat) VBE (sat) fT Cob tstg(1) tf(1) tstg(2) tf(2) TEST CONDITION VCB = 1700 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 2 A VCE = 5 V, IC = 8 A VCE = 5 V, IC = 17 A IC = 17 A, IB = 4.25 A IC = 17 A, IB = 4.25 A VCE = 10 V, IC = 0.. |
| Document | 2SC5857 datasheet pdf |
| Part Number | 2SC5856 |
| Manufacturer | Toshiba Semiconductor |
| Title | SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR |
| Description | www.DataSheet4U.com 2SC5856 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5856 HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUT. |
| Features |
perating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test re. |
| Document | 2SC5856 datasheet pdf |
| Part Number | 2SC5855 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High speed switching ·High voltage ·Low saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance an. |
| Features |
ge IC=10mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE=1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC=8A; IB= 2A
VBE(sat) Base-Emitter Saturation Voltage
IC=8A; IB= 2A
ICBO
Collector Cutoff Current
VCB= 1500V; IE= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
hFE-2
DC Curre. |
| Document | 2SC5855 datasheet pdf |
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