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C5480 |
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| Part Number | C5480 |
| Manufacturer | Renesas (https://www.renesas.com/) |
| Description | www.DataSheet4U.com 2SC5480 Silicon NPN Triple Diffused Horizntal Deflection Output ADE-208-632 (Z) 1st. Edition Oct. 1, 1998 Features • High breakdown voltage VCES = 1500 V • Isolated package TO–3P... |
| Features |
• High breakdown voltage VCES = 1500 V • Isolated package TO –3PFM • Built-in damper diode Outline TO –3PFM C 2 1 B 3 E 1 2 3 1. Base 2. Collector 3. Emitter www.DataSheet4U.com 2SC5480 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Collector to emitter diode forward current Note: 1. Value at Tc = 25° C Symbol VCES VEBO IC ic(peak) PC Tj Tstg ID Note1 Ratings 1500 5 14 28 50 150 –55 to +150 14 Unit V V A A W °C °C A Electrical ... |
| Document |
 C5480 Data Sheet
PDF 69.24KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | C5488 |
Sanyo Semicon Device |
2SC5488 |
|
| 2 | C5404 |
Toshiba Semiconductor |
2SC5404 |
|
| 3 | C5406 |
Panasonic |
Silicon NPN triple diffusion mesa type Power Transistors |
|
| 4 | C5406A |
Panasonic |
Silicon NPN triple diffusion mesa type Power Transistors |
|
| 5 | C5407 |
Panasonic |
2SC5407 |
|
| 6 | C5411 |
Toshiba Semiconductor |
2SC5411 |
|
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