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G3314 |
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| Part Number | G3314 |
| Manufacturer | GTM |
| Description | Features *Low On-resistance *Ultrahigh-speed switching *4V drive Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L ... |
| Features |
*Low On-resistance *Ultrahigh-speed switching *4V drive
Package Dimensions
REF. A B C D E F
Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55
REF. G H K J L M
Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 3 Continuous Drain Current Pulsed Drain Current1,2 Power Dissipation Linear Derating Factor
Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a
Operating Junction and Storage Temperature Range
Ratings -30 20 -1... |
| Document |
 G3314 Data Sheet
PDF 410.99KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | G3355K |
EPCOS |
SAW COMPONENTS |
|
| 2 | G30 |
MACOM |
Voltage-Controlled Attenuator Module |
|
| 3 | G3000TF250 |
IXYS |
Anode Shorted Gate Turn-Off Thyristor |
|
| 4 | G3000TF450 |
IXYS |
Anode Shorted Gate Turn-Off Thyristor |
|
| 5 | G3018 |
GTM |
N-CHANNEL MOSFET |
|
| 6 | G3018K |
GTM |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
Desde 2024. D4U Semiconductor.
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