3NF06L |
Part Number | 3NF06L |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, ... |
Features |
nuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature
Value 60 60 ± 16 4 2.9 16 3.3 0.026 10 200 -55 to 150
(1) ISD ≤ 3A, di/dt ≤ 150A/µs, VDD ≤ V (BR)DSS, T j ≤ T JMAX (2) Starting T j = 25 oC, ID = 4A, VDD = 30V
Unit V V V A A A W W/°C V/ns mJ °C
EAS (2) Tstg Tj
( • •) Pulse width limited by safe operating area. ( •) Current limited by the package December 2002 . 1/8 STN3NF06L THERMAL DATA Rthj-pcb Rthj-pcb Tl Thermal Resistance Junction-P... |
Document |
3NF06L Data Sheet
PDF 546.21KB |
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