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NE5511279A |
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| Part Number | NE5511279A |
| Manufacturer | NEC |
| Description | NEC's NE5511279A is an N-Channel silicon power laterally diffused MOSFET specially designed as the transmission power amplifier for 7.5 V radio systems. Die are manufactured using NEC's NEWMOS1 technol... |
| Features |
• HIGH OUTPUT POWER: Pout = 40.0 dBm TYP., f = 900 MHz, VDS = 7.5 V, Pout = 40.5 dBm TYP., f = 460 MHz, VDS = 7.5 V, • HIGH POWER ADDED EFFICIENCY: ηadd = 48% TYP., f = 900 MHz, VDS = 7.5 V, 5.7 MAX. 0.6±0.15 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 79A (Bottom View) 4.2 MAX. Source 1.5±0.2 Source 21001 4.4 MAX. GL = 18.5 dB TYP., f = 460 MHz, VDS = 7.5 V, • SURFACE MOUNT PACKAGE: 5.7 x 5.7 x 1.1 mm MAX • SINGLE SUPPLY: VDS = 2.8 to 8.0 V 0.4±0.15 5.7 MAX. 0.8 MAX. 3.6±0.2 W • HIGH LINEAR GAIN: GL = 15.0 dB TYP., f = 900 MHz, VDS = 7.5 V, APPLICATIONS • UHF RADIO SYSTEMS • CELLU... |
| Document |
 NE5511279A Data Sheet
PDF 103.99KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NE5511279A |
CEL |
7.5V OPERATION SILICON RF POWER LD-MOS FET |
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| 2 | NE5510179A |
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| 3 | NE5510279A |
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| 5 | NE5512D |
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| 6 | NE5512N |
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| 7 | NE5514 |
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| 9 | NE5514N |
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| 10 | NE5517 |
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