Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
NE5517 |
| Part Number | NE5517 |
| Manufacturer | ON Semiconductor |
| Title | Dual Operational Transconductance Amplifier |
| Description | Pin No. Symbol 1 IABCa 2 Da 3 +INa 4 −INa 5 VOa 6 V− 7 INBUFFERa 8 VOBUFFERa 9 VOBUFFERb 10 INBUFFERb 11 V+ 12 VOb 13 −INb 14 +INb 15 Db 16 IABCb NE5517 Amplifier Bias Input A Diode Bias A Non-inverted Input A Inverted Input A Output A Negative Supply Buffer Input. |
| Features |
• Constant Impedance Buffers • DVBE of Buffer is Constant with Amplifier IBIAS Change • Excellent Matching Between Amplifiers • Linearizing Diodes • High Output Signal-to-Noise Ratio • This is a Pb−Free Device Applications • Multiplexers • Timers • Electronic Music Synthesizers • Dolby® HX Systems • Current-Controlled Amplifiers, Filters • Current-Controlled Oscillators, Impedances DATA SHEET www. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NE5510179A |
NEC |
3.5V OPERATION SILICON RF POWER MOSFET |
|
| 2 | NE5510279A |
NEC |
3.5V OPERATION SILICON RF POWER MOSFET |
|
| 3 | NE5511279A |
NEC |
7.5 V UHF BAND RF POWER SILICON LD-MOS FET |
|
| 4 | NE5511279A |
CEL |
7.5V OPERATION SILICON RF POWER LD-MOS FET |
|
| 5 | NE5512 |
Philips |
Dual high-performance operational amplifier |
|
| 6 | NE5512D |
Philips |
Dual high-performance operational amplifier |
|
| 7 | NE5512N |
Philips |
Dual high-performance operational amplifier |
|
| 8 | NE5514 |
Philips |
Quad high-performance operational amplifier |
|
| 9 | NE5514D |
Philips |
Quad high-performance operational amplifier |
|
| 10 | NE5514N |
Philips |
Quad high-performance operational amplifier |
|
Desde 2024. D4U Semiconductor.
|