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NE5510279A |
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| Part Number | NE5510279A |
| Manufacturer | NEC |
| Description | The NE5510279A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 3.5 V GSM1800 handsets. Dies are manufactured using NEC's NEWMOS technology (NEC's 0.6 µ ... |
| Features |
• HIGH OUTPUT POWER: 32 dBm TYP at VDS = 3.5 V, IDQ = 400 mA, f = 1.8 GHz, PIN = 25 dBm • HIGH POWER ADDED EFFICIENCY: 45% TYP at VDS = 3.5 V, IDQ = 400 mA, f = 1.8 GHz, PIN = 25 dBm • HIGH LINEAR GAIN: 10 dB TYP at VDS = 3.5 V, IDQ = 400 mA, f = 1.8 GHz, PIN = 10 dBm • SURFACE MOUNT PACKAGE: 5.7 x 5.7 x 1.1 mm MAX • SINGLE SUPPLY: 2.8 to 6.0 V 0.9 ± 0.2 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 79A 4.2 Max 1.5 ± 0.2 Source Source Gate 5.7 Max 0.6 ± 0.15 Drain 0.8 ± 0.15 4.4 Max Gate 1.0 Max Drain 1.2 Max 0.8 Max 3.6 ± 0.2 0.4 ± 0.15 5.7 Max 0.2 ± 0.1 Bottom View DESCRIPTION Th... |
| Document |
 NE5510279A Data Sheet
PDF 45.29KB |
| Distributor | Stock | Price | Buy |
|---|
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