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NE5510179A |
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| Part Number | NE5510179A |
| Manufacturer | NEC |
| Description | The NE5510179A is an N-Channel silicon power MOSFET specially designed as the transmission driver amplifier for 3.5 V GSM1800 and GSM 1900 handsets. Dies are manufactured using NEC's NEWMOS technology... |
| Features |
• HIGH OUTPUT POWER: 29.5 dBm TYP VDS = 3.5 V, IDQ = 200 mA, f = 1.9 GHz, PIN = 22 dBm • HIGH LINEAR GAIN: 11 dB TYP VDS = 3.5 V, IDQ = 200 mA, f = 1.9 GHz, PIN = 5dBm • HIGH POWER ADDED EFFICIENCY: 50% TYP VDS = 3.5 V, IDQ = 200 mA, f = 1.9 GHz, PIN = 22 dBm • SINGLE SUPPLY: 2.8 to 6.0 V • SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX 4.2 Max OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 79A 1.5 – 0.2 Source Source 5.7 Max 0.6 – 0.15 X Gate Drain 0.8 – 0.15 4.4 Max Gate 1.0 Max Drain 1.2 Max 0.8 Max 3.6 – 0.2 5.7 Max 8 0.4 – 0.15 DESCRIPTION The NE5510179A is an N-Channel silicon po... |
| Document |
 NE5510179A Data Sheet
PDF 45.04KB |
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