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IRF1503PBF |
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| Part Number | IRF1503PBF |
| Manufacturer | International Rectifier |
| Description | Specifically designed for Automotive applications, this design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low onresistance per silicon area. Additional fe... |
| Features |
O O O O O
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
RDS(on) = 3.3mΩ ID = 75A
Description
Specifically designed for Automotive applications, this design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These combine to make this design an extremely efficient and reliable de... |
| Document |
 IRF1503PBF Data Sheet
PDF 190.89KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF1503 |
International Rectifier |
AUTOMOTIVE MOSFET |
|
| 2 | IRF1503 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IRF1503LPBF |
International Rectifier |
Power MOSFET |
|
| 4 | IRF1503S |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IRF1503SPBF |
International Rectifier |
Power MOSFET |
|
| 6 | IRF150 |
Seme LAB |
N-CHANNEL POWER MOSFET |
|
Desde 2024. D4U Semiconductor.
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