IRF7421D1PBF |
Part Number | IRF7421D1PBF |
Manufacturer | International Rectifier |
Description | Top View The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize... |
Features |
g techniques.
SO-8
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Parameter
ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS@10Và Pulsed Drain Current À Power Dissipation à Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Á Junction and Storage Temperature Range
Maximum
5.8 4.6 46 2.0 1.3 16 ± 20 -5.0 -55 to +150
Units
A
W W/°C V V/ns °C
Thermal Resistance Ratings
Parameter
RθJA Junction-to-Ambient Ã
Maximum
62.5
Units
°C/W
Notes: À Repetitive rating; pulse width limited by maximum juncti... |
Document |
IRF7421D1PBF Data Sheet
PDF 251.24KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IRF7421D1 |
International Rectifier |
MOSFET & Schottky Diode | |
2 | IRF742 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
3 | IRF742 |
Fairchild Semiconductor |
N-Channel Power MOSFET | |
4 | IRF742 |
ART CHIP |
N-Channel Power MOSFETs | |
5 | IRF742 |
GE |
FIELD EFFECT POWER TRANSISTOR | |
6 | IRF7420 |
International Rectifier |
HEXFET Power MOSFET |