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IXFK52N30Q |
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| Part Number | IXFK52N30Q |
| Manufacturer | IXYS Corporation |
| Description | www.DataSheet4U.com HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Low Gate Charge and Capacitances Preliminary data Symbol VDSS VDGR VGS VGSM ID25 I... |
| Features |
• Low gate charge • International standard packages • Epoxy meet UL 94 V-0, flammability classification • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Avalanche energy and current rated • Fast intrinsic Rectifier Advantages • Easy to mount • Space savings • High power density Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 300 2 4 ±200 TJ = 25°C TJ = 125°C 50 1 V V nA mA mA VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1 mA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ... |
| Document |
 IXFK52N30Q Data Sheet
PDF 98.81KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IXFK52N100X |
IXYS |
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| 2 | IXFK52N60Q2 |
IXYS Corporation |
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| 3 | IXFK50N50 |
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| 4 | IXFK50N85X |
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| 5 | IXFK55N50 |
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| 6 | IXFK100N10 |
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| 7 | IXFK100N25 |
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| 8 | IXFK100N65X2 |
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| 9 | IXFK102N30P |
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| 10 | IXFK105N07 |
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Desde 2024. D4U Semiconductor.
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